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ترجمه مقاله Efficient InGaP/GaAs DJ solar cell with double back surface field layer - دانلود فایل


دانلود فایل ترجمه مقاله سلول خورشیدی دو پیوند InGaPGaAs کارآمد با دو لایه BSF

دانلود فایل ترجمه مقاله Design and evaluation of ARC less InGaPGaAs DJ solar cell with InGaP tunnel junction and optimized double top BSF layer The presence and performance of the tunnel junction layer and back surface field (BSF) layers is the chief reason behind the high efficiency of the multi-junction solar cells. In this work, the focus is on thes election of a suitable material for the tunnel junction along with introducing a new top BSF layer. The simulation work is carried out in ATLAS TCAD. The various performance parameters like ...
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ترجمه مقاله Efficiency improvement of ARC less InGaP/GaAs DJ solar cell with InGaP tunnel junction and optimized two BSF layer in top and bottom cells BSF layers with different thicknesses have been used in the upper and the lower cell and simulations have been done using the Silvaco ATLAS numerical modelling tools. It has been also found that in under the current matching condition with thinner upper BSF layers (160 nm, 30 nm) and a thicker lower BSF layer (1000 nm, 30 nm), JSC short circuit current density and VOC open circuit voltage and conv ...
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ترجمه مقاله Improving the performance of a multi-junction solar cell by optimizing BSF, base and emitter layers Abstract Reducing the recombination rate and increasing the photo-generation rate play a very significant role in improving the performance of the solar cells. In this research, AlGaAs has been used instead of GaAs in emitter layer with reduction in thicknesses of the base in order to decrease the recombination rate and increase the efficiency of the proposed solar cell. In addition, tunnel juncti ...
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ترجمه مقاله Simulation Study on the Effects of Changing Band Gap on Solar Cell Parameters Abstract—We perform the numerical analysis of a CIGS solar cell parameters such as open circuit voltage, short circuit current, maximum power, fill factor, and external quantum efficiency as a function of absorber layer band gap. These parameters are known to be the key parameters of a solar cell to determine its performance. We change the band gap of the CIGS absorber layer by changing its ...
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ترجمه مقاله A novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance A novel lightly doped drain and source Carbon nanotube field effect transistor (CNTFET) with negative differential resistance یک ترانزیستور اثر میدانی نانو لوله کربنی (CNTFET) سورس و درین سبک آلاییده شده جدید با مقاومت دیفرانسیل منفی In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative diff ...
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ترجمه مقاله Multijunction Solar Cells (توضیحاتی در خصوص سلول های خورشیدی) This paper gives an overview of solar cells and multijunction solar cells. The first part of the document describes the basic physics and design of single junction solar cells. It also highlights the history of solar cells and the advantages of solar technology. The second part of this paper discusses the physics, design, and fabrication process of multijunction solar cells. This section also desc ...
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ترجمه مقاله Highly efficient ARC less InGaP/GaAs DJ solar cell numerical modeling using optimized InAlGaP BSF layers An effective BSF is a key structural element for an efficient solar cell, either in a multi-junction or in a single-junction device. In this paper, two important materials AlGaAs and InAlGaP with their varied thickness (i.e. 0.05–1.0) μm both for top BSF and bottom BSF cells are investigated using the computational numerical modeling TCAD tool Silvaco ATLAS. It has been found that under t ...
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ترجمه مقاله Investigation of the cutoff frequency of double linear halo lightly doped drain and source CNTFET After discovering the carbon nanotube (CNT) by Aijima, scientific research about this structure are expanded due to its excellent electronic properties. One of the important properties of this structure is quasi-ballistic transport with very high carrier mobility. Using carbon nanotube, two types of field effect transistors have been discussed. The first type is Schottky barrier carbon nanotube f ...
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ست جدید ترکی-آذری ارگ 2019